CONTROL OF RESISTIVITY, MICROSTRUCTURE, AND STRESS IN ELECTRON-BEAM EVAPORATED TUNGSTEN FILMS

被引：44
|
作者：
SINHA, AK [1 ]
SMITH, TE [1 ]
SHENG, TT [1 ]
AXELROD, NN [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 03期
关键词：
D O I：
10.1116/1.1317085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An experimental study is made of the use of the electron beam evaporation technique for obtaining relatively pure tungsten films suitable for gate material in refractory metal-oxide-semiconductor devices. Films produced had a resistivity of 7-8 mu ohm-cm when deposited on substrates at 500-700 C. Such films have small grain size, small tensile stress and high microstructural perfection. Films deposited at lower temperatures had resistivities of 10-15 mu ohm-cm.
引用
收藏
页码：436 / 444
页数：9
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