ON THERMAL AND EXCESS CURRENTS IN GASB TUNNEL DIODES

被引：2

作者：

NANAVATI, RP

EISENCRAFT, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 10期

关键词：

D O I：

10.1109/T-ED.1968.16520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：796 / +

页数：1

共 50 条

[1] EXCESS AND THERMAL CURRENTS IN GALLIUM ARSENIDE TUNNEL DIODES
AMERICO, C
DEANDRADE, M
SOLID-STATE ELECTRONICS, 1966, 9 (09) : 901 - &
[2] ELECTRON-IRRADIATION EFFECT ON EXCESS CURRENTS OF TUNNEL-DIODES FROM GASB
ALEKSEYEVA, ZM
VYATKIN, AP
GLUSHCHENKO, VA
DMITRIYEV, AP
ZAKHAREVSKII, AI
PARKHOMENKO, RP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (07): : 89 - 93
[3] HIGH REVERSE CURRENTS OF GASB AND GAAS TUNNEL DIODES
ARIZUMI, T
YOSHIDA, A
SUZUKI, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) : 214 - &
[4] TUNNEL AND EXCESS CURRENTS IN STRESSED ESAKI DIODES
PITTELLI, E
RINDNER, W
SOLID-STATE ELECTRONICS, 1967, 10 (09) : 911 - &
[5] EFFECTS OF TENSION ON EXCESS CURRENTS AND DIFFUSION IN TUNNEL DIODES
POCHAT, A
LOAEC, J
JOHANNIN, P
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1968, 266 (18): : 1195 - &
[6] EXCESS AND THERMAL CURRENT IN GAAS TUNNEL DIODES
CONSTANT.C
IVAN, E
POPESCU, A
REVUE ROUMAINE DE PHYSIQUE, 1969, 14 (09): : 855 - &
[7] EXCESS AND THERMAL CURRENTS IN GALLIUM ARSENIDE ESAKI DIODES
SHIBATA, A
JAPANESE JOURNAL OF APPLIED PHYSICS, 1964, 3 (11) : 711 - &
[8] EXCESS CURRENTS IN TUNNEL-DIODES FROM N-GAAS
VYATKIN, AP
GLUSHCHENKO, VA
PARKHOMENKO, RP
PASTOR, AP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (03): : 82 - 86
[9] DEGENERATE GERMANIUM .1. TUNNEL, EXCESS, AND THERMAL CURRENT IN TUNNEL DIODES
MEYERHOFER, D
BROWN, GA
SOMMERS, HS
PHYSICAL REVIEW, 1962, 126 (04): : 1329 - &
[10] INFLUENCE OF LATTICE-DEFECTS ON EXCESS CURRENTS IN GAAS TUNNEL-DIODES
ALEKSEEVA, ZM
BRUDNYI, VN
KRIVOV, MA
KRIVOROTOV, NP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (09): : 88 - 92

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