TEM OF DISLOCATIONS UNDER HIGH STRESS IN GERMANIUM AND DOPED SILICON

被引：28
|
作者：
ALEXANDER, H
EPPENSTEIN, H
GOTTSCHALK, H
WENDLER, S
机构：
来源：
JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / JAN期
关键词：
D O I：
10.1111/j.1365-2818.1980.tb00241.x
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
引用
收藏
页码：13 / 21
页数：9
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