INFRARED ALGAAS AND VISIBLE ALGALNP LASER-DIODE STACK

被引：1
|
作者：
BOUR, DP
TREAK, DW
BEERNINK, KJ
THORNTON, RL
机构：
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 21期
关键词：
SEMICONDUCTOR JUNCTION LASERS; LASER DIODES; INTEGRATED OPTOELECTRONICS;
D O I：
10.1049/el:19931235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithic combination of an AlGaAs laser and an AlGaInP laser is demonstrated. The two lasers are grown in a stack, in a single metal organic vapour phase epitaxial growth. The two devices can be addressed individually, and exhibit good characteristics: for the AlGaAs laser, the pulsed threshold current density and efficiency are 240 A/cm2 and 26%/facet, while the respective values for the red AlGaInP laser are 260 A/cm2 and 21%/facet.
引用
收藏
页码：1855 / 1856
页数：2
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