RAMAN-SCATTERING DEPTH PROFILE OF MBE GROWN ALXGA1-XAS/GAAS AND GAAS/SI

被引:0
|
作者
IIZUKA, K
SUZUKI, T
机构
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:295 / 298
页数:4
相关论文
共 50 条
  • [41] CONFINED-TO-PROPAGATING TRANSITION OF LO PHONONS IN GAAS/ALXGA1-XAS SUPERLATTICES OBSERVED BY PICOSECOND RAMAN-SCATTERING - REPLY
    KIM, DS
    BOUCHALKHA, A
    JACOB, JM
    ZHOU, JF
    SONG, JJ
    KLEM, JF
    PHYSICAL REVIEW LETTERS, 1994, 72 (10) : 1572 - 1572
  • [42] CONFINED-TO-PROPAGATING TRANSITION OF LO PHONONS IN GAAS/ALXGA1-XAS SUPERLATTICES OBSERVED BY PICOSECOND RAMAN-SCATTERING - COMMENT
    SPENCER, GS
    MENENDEZ, J
    PHYSICAL REVIEW LETTERS, 1994, 72 (10) : 1571 - 1571
  • [43] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier
    Kim, DS
    Ko, HS
    Kim, YM
    Rhee, SJ
    Hong, SC
    Yee, DS
    Woo, JC
    Choi, HJ
    Ihm, J
    17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 729 - 730
  • [44] HYDROGEN-SULFIDE DOPING OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY (MBE)
    BRIONES, F
    GOLMAYO, D
    GONZALEZ, L
    DEMIGUEL, JL
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (03): : 147 - 151
  • [45] Electronic structure and optical absorption of GaAs/AlxGa1-xAs and AlxGa1-xAs/GaAs core-shell nanowires
    Kishore, V. V. Ravi
    Partoens, B.
    Peeters, F. M.
    PHYSICAL REVIEW B, 2010, 82 (23):
  • [46] SYMMETRY OF THE SI SHALLOW DONOR STATE IN ALAS GAAS AND ALXGA1-XAS GAAS HETEROSTRUCTURES
    GLASER, E
    KENNEDY, TA
    SILLMON, RS
    SPENCER, MG
    PHYSICAL REVIEW B, 1989, 40 (05): : 3447 - 3450
  • [47] INVESTIGATION OF GAAS ALXGA1-XAS AND INYGA1-YAS GAAS SUPERLATTICES ON SI SUBSTRATES
    REDDY, UK
    JI, G
    HUANG, D
    MUNNS, G
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1987, 50 (24) : 1748 - 1750
  • [48] 用MBE法生长GaAs/AlxGa1-xAs异质结的半绝缘AlxGa1-xAs缓冲层
    J.Saito
    周章文
    半导体情报, 1987, (05) : 45 - 48
  • [49] SURFACE CHARACTERIZATION BY RHEED TECHNIQUES DURING MBE GROWTH OF GAAS AND ALXGA1-XAS
    DAWERITZ, L
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (02) : 141 - 145
  • [50] INFLUENCE OF MBE GROWTH-CONDITIONS ON THE PROPERTIES OF ALXGA1-XAS/GAAS HETEROSTRUCTURES
    MORKOC, H
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 209 - 220