Electrical conductivity and phase diagram of binary alloys 12 Anouncement - The lithium-bismuth system

被引：0
|
作者：
Grube, G
Vosskuhler, H
Schlecht, H
机构：
来源：
ZEITSCHRIFT FUR ELEKTROCHEMIE UND ANGEWANDTE PHYSIKALISCHE CHEMIE | 1934年 / 40卷
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：270 / 274
页数：5
相关论文
共 50 条
  • [41] Phase diagram of the neodymium-bismuth system
    Abulkhaev, VD
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2001, 46 (04) : 580 - 583
  • [42] Phase diagram of the neodymium-bismuth system
    2001, MAIK Nauka (46):
  • [43] PHASE DIAGRAM OF BISMUTH OXIDEGALLIUM OXIDE SYSTEM
    SAFRONOV, GM
    SPERANSK, EI
    BATOG, VN
    MITKINA, GD
    FEDOROV, PM
    GUBINA, TF
    ZHURNAL NEORGANICHESKOI KHIMII, 1971, 16 (02): : 526 - +
  • [44] PHASE DIAGRAM OF NEODYMIUM-BISMUTH SYSTEM
    KOBZENKO, GF
    CHORNOGO.VB
    DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1970, (10): : 945 - &
  • [45] A diagram of the solidification and electrical conductivity of rubidium-caesium alloys
    Rinck, E
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1937, 205 : 135 - 137
  • [46] Phase Diagram of the InP Binary System
    Ikhmayies, Shadia J.
    CHARACTERIZATION OF MINERALS, METALS, AND MATERIALS 2020, 2020, : 283 - 288
  • [47] THE THERMOELECTRIC PROPERTIES AND ELECTRICAL CONDUCTIVITY OF BISMUTH-SELENIUM ALLOYS
    CULLITY, BD
    TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS, 1948, 175 : 757 - 765
  • [48] THE ELECTRICAL-CONDUCTIVITY AND THE PHASE-DIAGRAM OF THE MOLTEN TIN-TELLURIUM SYSTEM
    KUROSAWA, S
    NAKAMURA, Y
    SHIMOJI, M
    JOURNAL OF THE LESS-COMMON METALS, 1980, 70 (01): : 119 - 121
  • [49] Phase diagram for the quasi-binary thallium(I) selenide-bismuth(III) telluride system
    Mucha, I.
    Gawel, W.
    SCIENTIFIC REPORTS, 2024, 14 (01):
  • [50] Phase diagram of binary system C12Zn-C18Zn
    Wu, KZ
    Wang, XD
    Liu, XD
    JOURNAL OF UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING, 2003, 10 (04): : 75 - 77
12345