CHARGED-PARTICLE PROBES TO SEMICONDUCTOR SUPERLATTICE

Ion channeling has been applied during recent years to determine mismatch strains in superlattices and/or misfit defects generated to accommodate these strains. The nature and concentration of the defects can be accurately determined by this method. In these calculations on ion channeling, we have used a shell structure potential obtained by including the effects of the individual electron orbitals of the target atoms. The results for the shell structure potential are compared with those obtained with other statistical potentials like the Moliere potential, the power potential and the universal potential. The results of this detailed study show that shell potential results compare well with experimental results, and with those of other potentials. Here we present calculations on Catastrophic Dechanneling Resonance (CDR) for a He-4 ion beam along the (110) plane in a GaAs0.09P0.91/GaP superlattice. The tilt angle at successive interfaces is incorporated by a Dirac delta function in the equation of motion, which is solved numerically to evaluate dechanneling in successive layers.