EDGE OF THE 2-DIMENSIONAL ELECTRON-GAS IN A GATED HETEROSTRUCTURE

被引：41
|
作者：
LARKIN, IA
DAVIES, JH
机构：
[1] Department of Electronics and Electrical Engineering, Glasgow University, Glasgow
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 08期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1103/PhysRevB.52.R5535
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We describe a quantitative electrostatic theory of the two-dimensional electron gas (2DEG) confined by a semi-infinite gate. It includes the finite depth of the 2DEG below the surface of a heterostructure, which enables us to treat the whole range of gate voltages. Two models are used for the boundary condition on the free surface, with either pinned potential or frozen charge. Our results predict the position and width of the strips of incompressible liquid in the quantum Hall regime, and are in good agreement with recent experiments.
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页码：R5535 / R5538
页数：4
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