OPTICAL LITHOGRAPHY IN THE 1-MU-M LIMIT

被引：0

作者：

DOANE, DA ^{[1
]}

机构：

[1] RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA

来源：

SOLID STATE TECHNOLOGY | 1980年 / 23卷 / 08期

关键词：

Compendex;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LITHOGRAPHY

引用

页码：101 / 114

页数：14

共 50 条

[1] TOWARDS HIGH VOLUME 1-MU-M LITHOGRAPHY
ROTTMANN, H
PRECISION ENGINEERING-JOURNAL OF THE AMERICAN SOCIETY FOR PRECISION ENGINEERING, 1983, 5 (04): : 147 - 151
[2] OPTICAL SOURCES AND DETECTORS IN 1-MU-M WAVELENGTH RANGE
YAMAMOTO, T
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (09) : D52 - D53
[3] OPTICAL COMMUNICATION-SYSTEMS IN 1-MU-M WAVELENGTH RANGE
KIMURA, T
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (09) : D53 - D53
[4] 1/8 MU-M OPTICAL LITHOGRAPHY
OWEN, G
PEASE, RFW
MARKLE, DA
GRENVILLE, A
HSIEH, RL
VONBUNAU, R
MALUF, NI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 3032 - 3036
[5] OPTICAL SEMICONDUCTOR-DEVICES OPERATING IN THE 1-MU-M WAVELENGTH REGION
SAKURAI, T
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[6] ON THE 1-MU-M SYSTEM OF IRON HYDRIDE
BALFOUR, WJ
LINDGREN, B
OCONNOR, S
CHEMICAL PHYSICS LETTERS, 1983, 96 (02) : 251 - 252
[7] ELECTRON RESISTS FOR 1-MU-M MICROLITHOGRAPHY
SUGAWARA, S
KOGURE, O
HARADA, K
KAKUCHI, M
SUKEGAWA, K
IMAMURA, S
MIYOSHI, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C107 - C107
[8] MEASUREMENT OF 1-MU-M DIAM BEAMS
CANNON, B
GARDNER, TS
COHEN, DK
APPLIED OPTICS, 1986, 25 (17): : 2981 - 2983
[9] A 1-MU-M BIPOLAR VLSI TECHNOLOGY
EVANS, SA
MORRIS, SA
ARLEDGE, LA
ENGLADE, JO
FULLER, CR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1373 - 1379
[10] PICOSECOND DAMAGE STUDIES AT 0.5-MU-M AND 1-MU-M
SOILEAU, MJ
WILLIAMS, WE
VANSTRYLAND, EW
BOGGESS, TF
SMIRL, AL
OPTICAL ENGINEERING, 1983, 22 (04) : 424 - 430

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