SHARP SILICON TIPS FOR AFM AND FIELD-EMISSION

被引：30
|
作者：
RANGELOW, IW
机构：
[1] University of Kassel, Institute of Technical Physics, 34109 Kassel
来源：
MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(94)90175-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the status of the development of dry etching processes for obtaining very sharp high aspect-ratio Si-tips. We have applied RIE with magnetic confinement plasma using oxide/resist masks. Three etching strategies correspond to different chemistries were used: (i)SF6+Ar, (ii)SF6+CCl2F2/Ar and (iii)BCl3/Cl-2/Br-2. The final sharpening of the tip is realized by oxidation followed by wet etching. The curvature radius of these dry etched tips is about 30nm and after sharpening radii tips below 10nm.
引用
收藏
页码：369 / 372
页数：4
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