ELECTRICAL AND OPTICAL-PROPERTIES OF A QUANTUM-WELL INFRARED PHOTOTRANSISTOR

被引：9
|
作者：
RYZHII, V
ERSHOV, M
机构：
[1] Univ. of Aizu, Wakamatsu
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 05期
关键词：
D O I：
10.1088/0268-1242/10/5/020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical and optical properties of quantum-well infrared phototransistors (QWIPTS) utilizing intersubband electron transitions from a single quantum well (QW) are studied theoretically. The dependences of the electron concentration in the QW, the dark current, the photocurrent and the responsivity on applied bias voltage are evaluated. The results obtained can be used for the optimization of the QWIPT performance.
引用
收藏
页码：687 / 690
页数：4
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