PROPERTIES OF HIGH-PERFORMANCE BACKGROUND LIMITED P-TYPE SI-ZN PHOTOCONDUCTORS

被引：12
|
作者：
SCLAR, N
机构：
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 03期
关键词：
D O I：
10.1016/0038-1101(81)90083-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：203 / 213
页数：11
相关论文
共 50 条
  • [31] Stability of High Performance p-type SnO TFTs
    Zhong, C. W.
    Tsai, H. Y.
    Lin, H. C.
    Liu, K. C.
    Huang, T. Y.
    PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015), 2015, : 84 - 87
  • [32] Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application
    Nie, Biao
    Luo, Lin-Bao
    Chen, Jing-Jing
    Hu, Ji-Gang
    Wu, Chun-Yan
    Wang, Li
    Yu, Yong-Qiang
    Zhu, Zhi-Feng
    Jie, Jian-Sheng
    NANOTECHNOLOGY, 2013, 24 (09)
  • [33] High performance CSTBT with p-type buried layer
    Zhang, J.
    Li, Z.
    Zhang, B.
    Li, Z.
    ELECTRONICS LETTERS, 2012, 48 (09) : 525 - 526
  • [34] High thermoelectric performance in p-type hierarchical architectures
    Li, Wang
    Xu, Tian
    Ma, Zheng
    Cheng, Yiming
    Li, Jinmeng
    Jiang, Qinghui
    Luo, Yubo
    Yang, Junyou
    MATERIALS TODAY ENERGY, 2022, 29
  • [35] High-performance thermoelectrics of p-type PbTe via synergistic regulation of band and microstructure engineering
    Lv, Fangling
    Zhong, Yan
    Zhao, Xuanwei
    An, Xiang
    Lin, Liwei
    Ren, Ding
    Liu, Bo
    Ang, Ran
    MATERIALS TODAY PHYSICS, 2023, 34
  • [36] High thermoelectric performance in p-type ZnSb upon increasing Zn vacancies: an experimental and theoretical study
    Palraj, Jothilal
    Sajjad, Muhammad
    Moorthy, Manojkumar
    Saminathan, Madhuvathani
    Srinivasan, Bhuvanesh
    Singh, Nirpendra
    Parasuraman, Rajasekar
    Patole, Shashikant P.
    Mangalampalli, Kiran
    Perumal, Suresh
    JOURNAL OF MATERIALS CHEMISTRY A, 2024, 12 (23) : 13860 - 13875
  • [37] SOME PROPERTIES OF HIGH RESISTIVITY P-TYPE GERMANIUM
    DUNLAP, WC
    PHYSICAL REVIEW, 1950, 79 (02): : 286 - 292
  • [38] Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures
    Pietruszka, Rafal
    Witkowski, Bartlomiej S.
    Luka, Grzegorz
    Wachnicki, Lukasz
    Gieraltowska, Sylwia
    Kopalko, Krzysztof
    Zielony, Eunika
    Bieganski, Piotr
    Placzek-Popko, Ewa
    Godlewski, Marek
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2014, 5 : 173 - 179
  • [39] Impact of ammonia on the electrical properties of p-type Si nanowire arrays
    Li, Chuanbo
    Zhang, Chunqian
    Fobelets, Kristel
    Zheng, Jun
    Xue, Chunlai
    Zuo, Yuhua
    Cheng, Buwen
    Wang, Qiming
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (17)
  • [40] Effect of Si substrate on the properties of p-type ZnO:Ag films
    Duan, Li
    Yu, Xiaochen
    Gou, Lei
    Ni, Lei
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (10): : 1608 - 1611
12345