PROPERTIES OF HIGH-PERFORMANCE BACKGROUND LIMITED P-TYPE SI-ZN PHOTOCONDUCTORS

被引：12
|
作者：
SCLAR, N
机构：
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 03期
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D O I：
10.1016/0038-1101(81)90083-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：203 / 213
页数：11
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