CRITICAL-BEHAVIOR OF THE HALL-COEFFICIENT OF SIP AT THE METAL-INSULATOR-TRANSITION

被引：20

作者：

DAI, PH

ZHANG, YZ

SARACHIK, MP

机构：

[1] Physics Department, City College, City University of New York, New York

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.49.14039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Measurements down to 0.06 K indicate that the Hall coefficient of Si:P diverges as the metal-insulator transition is approached, in contrast with an earlier report by Koon and Castner for Si:As, and in disagreement with their claim for Si:P. We show that zero-temperature extrapolations deduced from data above 0.5 K, the range used in the earlier experiments, can yield a Hall coefficient that appears to remain finite.

引用

页码：14039 / 14042

页数：4

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