CRITICAL-BEHAVIOR OF THE HALL-COEFFICIENT OF SIP AT THE METAL-INSULATOR-TRANSITION

被引:20
|
作者
DAI, PH
ZHANG, YZ
SARACHIK, MP
机构
[1] Physics Department, City College, City University of New York, New York
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 19期
关键词
D O I
10.1103/PhysRevB.49.14039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Measurements down to 0.06 K indicate that the Hall coefficient of Si:P diverges as the metal-insulator transition is approached, in contrast with an earlier report by Koon and Castner for Si:As, and in disagreement with their claim for Si:P. We show that zero-temperature extrapolations deduced from data above 0.5 K, the range used in the earlier experiments, can yield a Hall coefficient that appears to remain finite.
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页码:14039 / 14042
页数:4
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