共 50 条
- [41] Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC Appl Phys Lett, 14 (1963):
- [42] ENERGY LEVELS OF LUMINESCENCE AND CAPTURE CENTERS IN SIC (6H) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (02): : 163 - &
- [44] PHOTOLUMINESCENCE OF NITROGEN-EXCITON COMPLEXES IN 6H SIC PHYSICAL REVIEW, 1963, 131 (01): : 127 - &
- [46] DYNAMICS OF THE NITROGEN-BOUND EXCITONS IN 6H SIC PHYSICAL REVIEW B, 1994, 50 (12): : 8305 - 8309
- [47] The Optical Admittance Spectroscopy of the vanadium donor and acceptor levels in semi-insulating 4H-SiC and 6H-SiC SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 647 - +
- [48] Homoepitaxial growth of 6H SiC on single crystalline spheres SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 193 - 196
- [49] PIEZORESISTANCE OF P-TYPE 6H SiC. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1975, 17 (09): : 1808 - 1811
- [50] PHOTO-ELASTIC PROPERTIES OF SIC(6H) CRYSTALS OPTIKA I SPEKTROSKOPIYA, 1980, 49 (01): : 193 - 195