EXTENSION OF THE LAYER-BY-LAYER GROWTH REGIME OF INXGA1-XAS ON GAAS (001)

被引：19

作者：

GRANDJEAN, N

MASSIES, J

机构：

[1] Lab. de Phys. du Solide et Energie Solaire, CNRS, Valbonne

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 11期

关键词：

D O I：

10.1088/0268-1242/8/11/016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to delay the occurrence of the 2D-3D growth mode transition in highly strained InxGa1-xAs epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass transport at the surface should be reduced. This can be achieved by increasing the growth rate. It is demonstrated in this letter that this is an efficient way to increase the critical thickness for which the 3D growth appears.

引用

页码：2031 / 2034

页数：4

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