CLUSTER FORMATION OF LI ON THE SI(111)7X7 SURFACE

被引：44

作者：

HASEGAWA, Y

KAMIYA, I

HASHIZUME, T

SAKURAI, T

TOCHIHARA, H

KUBOTA, M

MURATA, Y

机构：

[1] STM Group, The Institute for Solid State Physics, The University of Tokyo, Roppongi

[2] The Institute for Solid State Physics, The University of Tokyo, Roppongi

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.577074

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using a field ion-scanning tunneling microscope (FI-STM), the adsorption process of Li on the Si(111) 7 X 7 surface has been studied. At the initial stage, trimers are formed preferentially in the faulted half of the 7 X 7 unit cell. At higher coverages, these trimers coalesce to form six-atom and nine-atom clusters across the interface between the faulted and unfaulted halves. It is suggested, based on the careful study of the adsorption sites, that the Si adatoms of the dimer-adatom-stacking fault (DAS) model may be removed upon the Li adsorption. © 1990, American Vacuum Society. All rights reserved.

引用

页码：238 / 240

页数：3

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