BUFFER LAYERS OF CUBIC ZIRCONIUM DIOXIDE ON SILICON SUBSTRATES

被引：0
|
作者：
ALFEEV, VN
GLYBIN, VP
ZAKHAROV, VI
LYNKOV, LM
PRISHCHEPA, SL
SOLOVEV, VV
TSEIGER, EN
机构：
来源：
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1990年 / 16卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：19 / 23
页数：5
相关论文
共 50 条
  • [31] Effects of adhesion layers on the ferroelectric properties of lead zirconium titanate thin films deposited on silicon nitride coated silicon substrates
    Zohni, Omar
    Buckner, Gregory
    Kim, Taeyun
    Kingon, Angus
    Maranchi, Jeff
    Siergiej, Richard
    THIN SOLID FILMS, 2008, 516 (18) : 6052 - 6057
  • [32] Characterization of AIN buffer layers on (0001)-sapphire substrates
    Universite de Montpellier II, Montpellier, France
    Mater Sci Eng B Solid State Adv Technol, 1-3 (32-37):
  • [33] Epitaxy of CdTe on Sapphire Substrates with Titanium Buffer Layers
    Muslimov, A. E.
    Butashin, A. V.
    Kanevsky, V. M.
    Babaev, V. A.
    Alikhanov, N. M. -R.
    CRYSTALLOGRAPHY REPORTS, 2017, 62 (03) : 455 - 459
  • [34] Characterization of ALN buffer layers on (0001)-sapphire substrates
    Le Vaillant, YM
    Bisaro, R
    Olivier, J
    Durand, O
    Duboz, JY
    Ruffenach-Clur, S
    Briot, O
    Gil, B
    Aulombard, RL
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 282 - 286
  • [35] Characterization of AIN buffer layers on (0001)-sapphire substrates
    Le Vaillant, YM
    Bisaro, R
    Olivier, J
    Durand, O
    Duboz, JY
    Ruffenach-Clur, S
    Briot, O
    Gil, B
    Aulombard, RL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 32 - 37
  • [36] Epitaxy of CdTe on sapphire substrates with titanium buffer layers
    A. E. Muslimov
    A. V. Butashin
    V. M. Kanevsky
    V. A. Babaev
    N. M.-R. Alikhanov
    Crystallography Reports, 2017, 62 : 455 - 459
  • [37] Glass substrates for GaN using ZnO buffer layers
    Butcher, KSA
    Afifuddin
    Patrick, PT
    Godlewski, M
    Szczerbakow, A
    Goldys, EM
    Tansley, TL
    Freitas, JA
    COMMAD 2000 PROCEEDINGS, 2000, : 535 - 538
  • [38] Growth and characterizations of GaN on SiC substrates with buffer layers
    J Appl Phys, 5 (2378):
  • [39] Growth and characterizations of GaN on SiC substrates with buffer layers
    Lin, CF
    Cheng, HC
    Chi, GC
    Feng, MS
    Guo, JD
    Hong, JMH
    Chen, CY
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2378 - 2382
  • [40] CUBIC BETA-SILICON CARBIDE FILMS ON SILICON SUBSTRATES
    TOMBS, NC
    COMER, JJ
    FITZGERA.JF
    SOLID-STATE ELECTRONICS, 1965, 8 (11) : 839 - &
12345