ETCHING OF SIO2 AND SI IN A HE-F2 PLASMA

被引：13

作者：

VASILE, MJ

机构：

[1] Bell Laboratories, Murray Hill, NJ 07974, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期

关键词：

PLASMAS - SEMICONDUCTING SILICON;

D O I：

10.1063/1.327971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2510 / 2515

页数：6

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