ICOSAHEDRAL PHASE FORMATION IN HIGH SILICON AND MANGANESE CONTENT AL-MN-SI ALLOYS

被引：3
|
作者：
SRINIVAS, V
DUNLAP, RA
机构：
[1] Department of Physics, Dalhousie University, Halifax
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1990年 / 125卷 / 01期
基金：
加拿大自然科学与工程研究理事会;
关键词：
D O I：
10.1016/0921-5093(90)90260-A
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Single-phase icosahedral AlMnSi alloys containing up to 30 at.% Mn and 33 at.% Si have been prepared directly by quenching from the melt. Alloys of the series Al70-xMnxSi30 (10≤x≤30), Al80-xMn20Six (6≤x≤40) and Al67-xMnxSi33 (28≤x≤32) were investigated. The regions of x for the formation of single-phase icosahedral alloys by direct quenching are x ≈ 26, x ≤ 20 and x ≈ 29 for the three series respectively. These alloys have quasi-lattice constants in the range 0.437-0.461 nm. Details of the structural properties of these alloys as well as their thermal stability as a function of composition are discussed. © 1990.
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页码：115 / 120
页数：6
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