EPITAXIAL-GROWTH FROM SIH4 IN A REDUCED PRESSURE SYSTEM

被引：0
|
作者：
LUCARINI, VJ [1 ]
BRATTER, RL [1 ]
BASSO, JE [1 ]
机构：
[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C91 / C91
页数：1
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