EPITAXIAL-GROWTH FROM SIH4 IN A REDUCED PRESSURE SYSTEM

被引：0

作者：

LUCARINI, VJ ^{[1
]}

BRATTER, RL ^{[1
]}

BASSO, JE ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C91 / C91

页数：1

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