Amorphous carbon containing very little hydrogen and having a highly tetrahedral character is deposited by filtered cathodic arc. This amorphous carbon shows photoconductivity under white light illumination. It is slightly p-type in pure form but becomes n-type when doped with nitrogen. Electron diffraction shows that nitrogen levels of less than 1% do not distort the tetrahedral network, but at higher concentrations nitrogen destabilises the tetrahedral structure. Plasmon spectroscopy shows the presence of a 1 nm ''defective'' surface layer even in the pure material which has implications for device applications. A junction field effect transistor structure is proposed as a possible device.
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Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
Mao, DS
Li, W
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机构:Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
Li, W
Wang, X
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机构:Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
Wang, X
Liu, XH
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机构:Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
Liu, XH
Li, Q
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机构:Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
Li, Q
Xu, JF
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机构:Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China