HYDROGEN-FREE AMORPHOUS-CARBON PREPARATION AND PROPERTIES

被引:89
|
作者
MCKENZIE, DR [1 ]
YIN, Y [1 ]
MARKS, NA [1 ]
DAVIS, CA [1 ]
PAILTHORPE, BA [1 ]
AMARATUNGA, GAJ [1 ]
VEERASAMY, VS [1 ]
机构
[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND
关键词
D O I
10.1016/0925-9635(94)90185-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous carbon containing very little hydrogen and having a highly tetrahedral character is deposited by filtered cathodic arc. This amorphous carbon shows photoconductivity under white light illumination. It is slightly p-type in pure form but becomes n-type when doped with nitrogen. Electron diffraction shows that nitrogen levels of less than 1% do not distort the tetrahedral network, but at higher concentrations nitrogen destabilises the tetrahedral structure. Plasmon spectroscopy shows the presence of a 1 nm ''defective'' surface layer even in the pure material which has implications for device applications. A junction field effect transistor structure is proposed as a possible device.
引用
收藏
页码:353 / 360
页数:8
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