DIFFERENTIAL NEGATIVE-RESISTANCE OF N-TYPE INVERSION LAYER IN SILICON MOS FIELD-EFFECT TRANSISTOR

被引：15

|

作者：

KATAYAMA, Y

YOSHIDA, I

KOMATSUBARA, KF

KOTERA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 01期

关键词：

D O I：

10.1063/1.1653968

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：31 / +

页数：1

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