CHARACTERISTICS OF THE TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY OF A-SI - H DOPED LIGHTLY WITH BORON

Temperature dependences of the intrinsic conductivity DELTA-sigma of hydrogenated amorphous silicon doped lightly with boron were investigated in the range 150-450 K. These dependences were nonmonotonic. Excitation with light of intensity exceeding 10(13) photons. cm-2. s-1 at temperatures in excess of 300 K yielded temperature dependences of DELTA-sigma which depended on the direction of change in the temperature in the course of measurements. The results obtained were explained by changes in the recombination channels and in the type of conduction of a sample due to a change in temperature and by the influence of low illumination intensities on the density of states, which governed the processes of recombination of nonequilibrium carriers.