SUPERLATTICES AND MULTILAYERS IN HYDROGENATED AMORPHOUS-SILICON DEVICES

被引：8

|

作者：

HIROSE, M ^{[1
]}

MIYAZAKI, S ^{[1
]}

机构：

[1] HIROSHIMA UNIV,INTEGRATED SYST RES CTR,HIROSHIMA 730,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2873 / 2876

页数：4

相关论文

共 50 条

[31] DOPING AND PSEUDODOPING OF HYDROGENATED AMORPHOUS-SILICON
GOLIKOVA, OA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (09): : 915 - 926
[32] PERSISTENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
CHOI, SH
PARK, GL
LEE, CC
JANG, J
SOLID STATE COMMUNICATIONS, 1986, 59 (03) : 177 - 181
[33] A STRUCTURAL MODEL OF HYDROGENATED AMORPHOUS-SILICON
DRCHAL, V
MALEK, J
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (03): : 271 - 287
[34] STRUCTURAL MODEL FOR HYDROGENATED AMORPHOUS-SILICON
WEAIRE, D
WOOTEN, F
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 495 - 500
[35] HYDROGENATED AMORPHOUS-SILICON DOPED WITH DYSPROSIUM
KULIKOV, GS
MEZDROGINA, MM
PERSHEEV, SK
ABDURAKHMANOV, KP
SEMICONDUCTORS, 1993, 27 (06) : 583 - 584
[36] OPTICAL BISTABILITY IN HYDROGENATED AMORPHOUS-SILICON
TANN, J
GAL, M
MEANEY, K
TAYLOR, PC
APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1017 - 1018
[37] DEFECT RELAXATION IN HYDROGENATED AMORPHOUS-SILICON
CRANDALL, RS
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 597 - 599
[38] BOND CPA FOR HYDROGENATED AMORPHOUS-SILICON
BARRIO, RA
SANSORES, LE
ELLIOTT, RJ
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 177 - 180
[39] NOISE IN HYDROGENATED AMORPHOUS-SILICON RESISTORS
KIM, SK
VANDERZIEL, A
PHYSICA B & C, 1980, 98 (04): : 303 - 305
[40] RECENT RESULTS ON HYDROGENATED AMORPHOUS-SILICON
STUKE, J
ANNUAL REVIEW OF MATERIALS SCIENCE, 1985, 15 : 79 - 102

← 1 2 3 4 5 →