PHOTOEMISSION-STUDY OF THE BAND-GAP ON CESIATED GE(111)1X1-AS

被引：3
|
作者：
HAKANSSON, MC
JOHANSSON, LSO
VAREKAMP, PR
KARLSSON, UO
KANSKI, J
KOWALSKI, BJ
机构：
[1] ROYAL INST TECHNOL, DEPT PHYS, S-10044 STOCKHOLM, SWEDEN
[2] CHALMERS UNIV TECHNOL, DEPT PHYS, S-41296 GOTHENBURG, SWEDEN
[3] POLISH ACAD SCI, INST PHYS, PL-02668 WARSAW, POLAND
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.52.R11646
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Deposition of small amounts of cesium on the As-terminated Ge(111) surface results in population of the lowest unoccupied surface state centered around the Gamma point in the surface Brillouin zone. By using angle-resolved photoemission we have directly determined the gap between this state and the lone-pair surface state to be 0.85 eV. This result provides support for recent quasiparticle band-structure calculations.
引用
收藏
页码：11646 / 11649
页数：4
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