ENHANCEMENT OF ADHESION IN ION-BEAM-MIXED CU/SIO2 SYSTEMS

被引：0

作者：

CHAE, KH ^{[1
]}

JOO, JH ^{[1
]}

CHOI, IS ^{[1
]}

KIM, KS ^{[1
]}

KIM, SS ^{[1
]}

WHANG, CN ^{[1
]}

KIM, HK ^{[1
]}

MOON, DW ^{[1
]}

机构：

[1] KOREA RES INST STAND & SCI,TAEJON 305606,SOUTH KOREA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1993年 / 26卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A thin Cu layer (35 nm) deposited on SiO2 has been mixed with 80-keV Ar+ at room temperature, 550 K, and 650 K. Interfacial properties of the irradiated samples were investigated with Rutherford backscattering spectroscopy (RBS), grazing angle X-ray diffraction (GXRD), and X-ray photo-electron spectroscopy (XPS), and by using a scratch tester. Adhesion of the Cu film was improved by a factor of 3 and at a dose of 1.5 X 10(16) Ar+/cm2 by ion-beam mixing at room temperature, while high-temperature ion-beam mixing enhanced the adhesion by a factor of 5. Ballistic mixing plays a role in improving the adhesion for room-temperature ion-mixing, and creation of the Cu2O phase induced by ion-beam mixing contributes to the enhancement of the adhesion at high temperature.

引用

页码：612 / 616

页数：5

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