KINETICS OF THE FORMATION AND ENERGY RELAXATION OF EXCITONS IN GAAS

被引：0
|
作者：
AAVIKSOO, YY [1 ]
REIMAND, IY [1 ]
ROSSIN, VV [1 ]
TRAVNIKOV, VV [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST,LENINGRAD,USSR
来源：
JETP LETTERS | 1991年 / 53卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Experimental study of the kinetics of polariton luminescence of GaAs has shown that the radiation pulse is delayed because of the energy relaxation of electrons and excitons. The energy relaxation was found to be delayed with decreasing concentration of small impurities.
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页码：395 / 399
页数：5
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