GROWTH OF CDSE NANOCRYSTALS IN ION-IMPLANTED SIO2-FILMS

Ion implantation technique has been used for the preparation of semiconductor nanocrystals in SiO2 films deposited on semiconductor and quartz substrates. The structural properties of the films have been investigated by using low temperature optical spectroscopy and high resolution electron microscopy, It is found that nucleation of the semiconductor phase can take place in the course of implantation with high ion dose. The profile of both the concentration and the mean size of nanocrystals over the film thickness is determined by the initial distribution of ions over the thickness and can be varied in a controlled manner with the use of sequential ion implantations with various energies and doses.