Thin - film transistors based on Zinc Oxide channel layer and Molybdenum doped Indium Oxide transparent electrodes

Thin-film transistors (TFT) were fabricated at room-temperature (RT) utilizing zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. The common bottom-gate TFTs were fabricated on commercially available thermal silicon oxide (100 nm thick) coated silicon wafers. A total of 100 devices were made in a 1 inch square area as 10 10 matrix, by varying the channel width and length, between 5 mu m and 300 mu m. Output and transfer characteristics of the fabricated devices were extracted from a semiconductor parameter analyzer. A threshold voltage (V-Th) of 10 V and an I-ON/I-OFF ratio of 1 10(-5) were obtained. The impact of channel dimensions on the device performance was investigated, confirming that the saturation current (I-sat) is directly proportional to the channel width (W), and inversely proportional to channel length (L), in agreement with field effect device theory.