ENERGY-DEPENDENCE OF SILICON AMORPHIZATION DURING ION-IMPLANTATION .1.

被引：3
|
作者：
YARKULOV, U
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1986年 / 100卷 / 1-2期
关键词：
D O I：
10.1080/00337578608208731
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：11 / 17
页数：7
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