INVESTIGATION OF ALPHA-SIALON FORMATION BY HIGH-TEMPERATURE X-RAY DIFFERACTION

被引:0
|
作者
ASHKIN, A
ASHKIN, D
BABUSHKIN, O
机构
来源
SILICON NITRIDE 93 | 1994年 / 89-9卷
关键词
HIGH TEMPERATURE X-RAY DIFFRACTION; SILICON NITRIDE; ALPHA-SIALON; KINETICS; PHASE TRANSFORMATIONS;
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A technique for following sialon formation in situ by high temperature x-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium alpha-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 degrees C and then studied by HT-XRD at temperatures between 1450 and 1580 degrees C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 degrees C. X-ray diffraction results show the formation of a Y10Al2Si3O18N4 phase at 1350 degrees C, which dissolved to form alpha-sialon and other phases at higher temperatures. The amounts of alpha-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the silicon nitride to -sialon transformation and resulted in a value of 330 kJ mol(-1).
引用
收藏
页码:373 / 377
页数:5
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