PHOSPHORUS DIFFUSION EFFECT ON DEFECT STRUCTURE OF SILICON WITH OXYGEN PRECIPITATES REVEALED BY GOLD DIFFUSION STUDY

被引：7
|
作者：
YAKIMOV, E
PERICHAUD, I
机构：
[1] Laboratoire de Photoélectricité, E.A. 882, Défauts Dans Les Semiconducteurs et Leurs Oxydes, University of Marseilles
[2] Institute of Microelectronics Technology, Chernogolovka, Moscow
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 14期
关键词：
D O I：
10.1063/1.115076
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Gold diffusion was used to understand the influence of phosphorus diffusion on defect structure of two step annealed Czochralski silicon wafers which contain oxygen related precipitates. Thanks to deep level transient spectroscopy measurements and use of relations already published, it was found that substitutional gold concentration is independent of oxygen precipitation, while phosphorus diffusion, by means of the injection of self-interstitials in the bulk, shrinks the oxygen precipitates and increases substitutional gold concentration approximately to the solubility limit. (C) 1995 American Institute of Physics.
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页码：2054 / 2056
页数：3
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