BALLISTIC ELECTRON-EMISSION MICROSCOPY OF METAL-SEMICONDUCTOR INTERFACES AND HETEROJUNCTIONS

被引：13
|
作者：
WILLIAMS, RH
机构：
[1] Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff, CF2 3YB
来源：
APPLIED SURFACE SCIENCE | 1993年 / 70-1卷
关键词：
D O I：
10.1016/0169-4332(93)90462-K
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ballistic electron emission microscopy is rapidly maturing as a method to probe electrical barriers at semiconductor interfaces with good energy resolution and a lateral resolution of a few tens of angstrom or less. We illustrate the application of the technique by concentrating on the Au/GaAs, Au/CdTe and InAs/GaAs interfaces.
引用
收藏
页码：386 / 390
页数：5
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