NEW CMOS TRIODE TRANSCONDUCTOR

被引：15
|
作者：
LEE, SO
PARK, SB
LEE, KR
机构：
[1] Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu Taejon 305-701
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 12期
关键词：
CMOS INTEGRATED CIRCUITS; TRANSCONDUCTORS;
D O I：
10.1049/el:19940668
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new CMOS transconductor is proposed, which is built around two conversion transistors operating in the triode region with their source and drain voltages kept constant. The proposed transconductor has an input swing range of 7V peak to peak within 1% THD at supply voltages of +/-5V and a large transconductance tuning range. Moreover, it can operate satisfactorily regardless of the transistor body connection.
引用
收藏
页码：946 / 948
页数：3
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