1D CONDUCTION AND PHOTOCONDUCTION MEASUREMENTS AT DISLOCATIONS IN GE

被引：5
|
作者：
HESS, J
LABUSCH, R
机构：
[1] Institut Für Angewandte Physik, Technischen Universität Clausthal
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期
关键词：
D O I：
10.1002/pssa.2211380230
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
New results on the conductivity along 60-degrees-dislocations are presented. First experiments on the transport from dislocations to the bulk are compared with recombination experiments carried out at macroscopically deformed samples. Measurements of the photoconductivity along dislocations are in agreement with earlier models of the band structure of the 90-degrees-partial in Ge and allow improvements in some details.
引用
收藏
页码：617 / 624
页数：8
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