Coping with Poor Dynamic Performance of Super-Junction MOSFET Body Diodes

被引：5

作者：

Pavlovsky, Martin ^{[1
]}

Guidi, Giuseppe ^{[1
]}

Kawamura, Atsuo ^{[1
]}

机构：

[1] Yokohama Natl Univ, Hodogaya Ku, 79-5,Tokiwadai, Yokohama, Kanagawa 2408501, Japan

来源：

IEEJ JOURNAL OF INDUSTRY APPLICATIONS | 2013年 / 2卷 / 04期

关键词：

superjunction MOSFET; body diode; reverse recovery; forward recovery; soft switching;

D O I：

10.1541/ieejjia.2.183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poor dynamic performance of body diodes in Super Junction MOSFETs may cause difficulties when utilised in high frequency conversion circuits. Excessive reverse recovery as well as forward recovery may in the best case result in high conversion losses and EMI pollution where as in the worst case they may completely disrupt the converter operation. In this paper, using an auxiliary snubber circuit to control the reverse recovery and connecting a fast diode in parallel to a super junction switch to reduce the forward recovery is proposed. As documented by numerous experimental results, both proposed concepts work well and both recoveries may be largely avoided. Implementation of the proposed concepts in a forward boost, reverse buck circuit resulted in efficiencies close to 98.5% in 3-12.5 kW load range while operating at 62.5 kHz.

引用

页码：183 / 188

页数：6

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