INITIAL NUCLEATION STUDIES OF HETEROEPITAXIAL GAAS FILMS ON SI SUBSTRATES BY MODULATED MOLECULAR-BEAM EPITAXY

被引：2
|
作者：
LEE, HP
LIU, XM
WANG, S
GEORGE, T
WEBER, ER
LILIENTALWEBER, Z
机构：
来源：
III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES | 1989年 / 145卷
关键词：
D O I：
10.1557/PROC-145-357
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：357 / 364
页数：8
相关论文
共 50 条
  • [31] GROWTH OF SI/GAAS SUPERLATTICES BY MOLECULAR-BEAM EPITAXY
    GILLESPIE, HJ
    CROOK, GE
    MATYI, RJ
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (06) : 721 - 723
  • [32] A COMPARISON OF DEEP LEVELS IN RAPIDLY THERMAL-PROCESSED GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON SI AND GAAS SUBSTRATES
    ITO, A
    KITAGAWA, A
    TOKUDA, Y
    USAMI, A
    KANO, H
    NOGE, H
    WADA, T
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (05) : 416 - 419
  • [33] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    FISCHER, R
    CHAND, N
    KOPP, W
    MORKOC, H
    ERICKSON, LP
    YOUNGMAN, R
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399
  • [34] GROWTH AND CHARACTERIZATION OF GAAS/GE EPILAYERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    SHELDON, P
    YACOBI, BG
    JONES, KM
    DUNLAVY, DJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4186 - 4193
  • [35] PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY
    HOUDRE, R
    MORKOC, H
    [J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (02) : 91 - 114
  • [36] MOLECULAR-BEAM EPITAXY OF GAAS ON SI-ON-INSULATOR
    ZHU, WH
    YU, YH
    LIN, CL
    LI, AZ
    ZOU, SC
    HEMMENT, PLF
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (02) : 210 - 212
  • [37] GROWTH OF INP ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    CRUMBAKER, TE
    LEE, HY
    HAFICH, MJ
    ROBINSON, GY
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (02) : 140 - 142
  • [38] METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF GAAS ON PATTERNED GAAS SUBSTRATES
    MARX, D
    ASAHI, H
    LIU, XF
    OKUNO, Y
    INOUE, K
    GONDA, S
    SHIMOMURA, S
    HIYAMIZU, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 204 - 209
  • [39] Model of crystal lattice strained along the preferential direction by anisotropic stress for GaAs heteroepitaxial films grown on vicinal Si(001) and Si(110) substrates by molecular-beam epitaxy
    Yodo, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (01): : 287 - 291
  • [40] HETEROEPITAXIAL GROWTH OF (CA,SR)F2 ON SI(100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    MINEMURA, T
    ASANO, J
    TSUTSUI, K
    FURUKAWA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 287 - 291
12345