SURFACE-POTENTIAL INVERSION OF THERMAL ANNEALED GAAS (001) OBSERVED BY REFLECTANCE-DIFFERENCE SPECTROSCOPY

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作者：
BALDERASNAVARRO, RE
VIDALBORBOLLA, MA
LASTRASMARTINEZ, A
LASTRASMARTINEZ, LF
机构：
来源：
REVISTA MEXICANA DE FISICA | 1994年 / 40卷 / 01期
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O4 [物理学];
学科分类号：
0702 ;
摘要：
Reflectance-difference spectroscopy measurements in the 2.5-3.5 eV energy range have been used to study surface potential inversion in semiinsulating GaAs (001), as induced by thermal annealing in a H-2 atmosphere at temperatures up to 600-degrees-C. The electro-optic component of the reflectance difference spectra is dependent of both, magnitude and direction of the GaAs surface electric-field. Taking this into account, the surface potential inversion process is followed through the evolution of the linear electro-optic component of the reflectance-difference spectrum. The technique described in this paper turns out to be sensitive to atomic layers in a depth of 100-200 angstrom, which allows us to follow the first stages of the surface potential inversion process.
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页码：1 / 6
页数：6
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