ULTRA-DRY OXIDATION FOR IMPROVING THE TIME-DEPENDENT DIELECTRIC-BREAKDOWN LIFETIME OF ULTRA-THIN SILICON-OXIDE FILMS

被引：17
|
作者：
YAMADA, H
TABE, M
机构：
[1] NTT LSI Laboratories, Atsugi, Kanagawa, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 6B期
关键词：
SILICON OXIDE; ULTRA-THIN FILMS; OXIDATION; MOS; TDDB; BREAKDOWN; LIFETIME; TUNNELING; LEAKAGE CURRENT;
D O I：
10.1143/JJAP.31.L747
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-dependent dielectric breakdown lifetime of 5-nm-thick silicon oxide films oxidized in an ultra-dry oxygen gas of less than 1-ppm moisture concentration was investigated. The lifetime for the ultra-dry films was larger than that for the conventional films oxidized in more than 100-ppm humidity. In particular, a pronounced improvement can be confirmed in the case when a silicon substrate is an anode. Since stress-induced positive charges, which affect the lifetime, are mainly generated near the anode-side oxide interfaces, the oxide-silicon interface conditions are probably improved by the ultra-dry oxidation.
引用
收藏
页码：L747 / L749
页数：3
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