HIGH-VOLTAGE ELECTRON MICROSCOPY OF RADIATION DAMAGE IN SILICON SINGLE CRYSTALS

被引：0
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作者：
BRACK, K
SCHWUTTK.GH
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 03期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
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页码：C96 / &
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