ABRUPT AND ARBITRARY PROFILE FORMATION IN SILICON USING A LOW-KINETIC-ENERGY ION-BOMBARDMENT PROCESS

被引：2
|
作者：
SHINDO, S
HIRAYAMA, M
OHMI, T
机构：
[1] Department of Electronic Engineering, Tohoku University, Aramaki, Aoba-ku Sendai, 980-77, Aza-Aoba
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期
关键词：
SILICON; EPITAXY; LOW TEMPERATURE; SPUTTERING; ION BOMBARDMENT; CARRIER CONCENTRATION; PROFILE;
D O I：
10.1143/JJAP.34.800
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have discovered that the carrier concentration in an epitaxial silicon film formed by the low-energy ion bombardment process is easily controlled by changing the ion bombardment energy during the film growth. While maintaining the perfect crystallinity of an epitaxial silicon layer grown at a temperature as low as 350 degrees C an arbitrary-shaped carrier concentration profile has been created in the film. Formation of box-shaped profiles as well as staircase-shaped profiles having very abrupt transitions is demonstrated. Formation of such arbitrary-shaped carrier profiles in an epitaxial layer is quite essential in the design of ultrasmall-dimension devices. The stability of carrier profiles against heat treatments also has been investigated.
引用
收藏
页码：800 / 803
页数：4
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