THE OPTIMUM DESIGN OF THIN-FILM TRANSISTORS BY DYNAMIC CHARACTERISTICS MEASUREMENT

By measuring the voltage from the source electrode of the TEG-TFTs, the dynamic characteristics of TFT-LCDs have been analysed. It was clearly determined that the V(rms) decrement depends on the increase in the delay time of the gate signal. Under the H-reversed half-line driving method, both the time lag between the drain and the gate signal and the size of TFTs were both optimized. We were able to obtain these results on the condition that tau-delay was equal to 1/3 of the on-time of the gate signal.