ANTIPHASE DEFECT REDUCTION-MECHANISM IN MBE GROWN GAAS ON SI

被引：3
|
作者：
SHIRAISHI, T
AJISAWA, H
YOKOYAMA, S
KAWABE, M
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-261
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：261 / 266
页数：6
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