THE CHARACTERISTICS OF CMOS DEVICES IN OXYGEN IMPLANTED SILICON-ON-INSULATOR - THE INFLUENCE OF THE MICROSTRUCTURE AT SILICON BURIED OXIDE INTERFACE

被引：0
|
作者：
MAO, BY [1 ]
CHEN, CE [1 ]
SUNDARESAN, R [1 ]
POLLACK, G [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：A11 / A11
页数：1
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