Electric-dipole spin resonance of defects correlated with the diffusion of Zn into Si

被引:0
|
作者
Schroth, H [1 ]
App, R [1 ]
Kopf, A [1 ]
Lassmann, K [1 ]
Bracht, H [1 ]
Stolwijk, NA [1 ]
机构
[1] UNIV MUNSTER,INST MET FORSCH,D-48149 MUNSTER,GERMANY
关键词
Si; Zn; diffusion; defects; EDSR;
D O I
10.4028/www.scientific.net/MSF.196-201.1601
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In various samples of dislocation-free Si doped with Zn by diffusion we find by electric-dipole spin resonance (EDSR) at 24 GHz, 33 GHz, and 60 GHz two trigonal triplet spectra and a number of nearly isotropic lines. The absolute and relative line strengths vary with the diffusion parameters, background doping of the samples and annealing after diffusion. Illumination with white light leads to a metastable change in the relative heights of the spectra. In a dislocation-rich sample none of the above spectra is observed, but instead after illumination a broad background with a sequence of a dispersion-like and three absorption-like anisotropic absorption structures that are periodic in B and a further isotropic dispersion-like line.
引用
收藏
页码:1601 / 1605
页数:5
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