A NEW MNOS MEMORY-ELEMENT - THE TUNNEL-DIODE

被引：3

作者：

RUTTER, P

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(81)90200-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：689 / 694

页数：6

共 50 条

[41] METHODS OF ANALYSIS FOR TUNNEL-DIODE CIRCUITS
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