B IMPLANTATION INTO SI LAYER PREAMORPHIZED BY GE IONS

被引：0
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作者：
AOKI, S
SATOH, M
KUREBAYASHI, M
KURIYAMA, K
机构：
来源：
PROCEEDINGS OF THE 7TH SYMPOSIUM ON ION BEAM TECHNOLOGY | 1989年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：87 / 90
页数：4
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